Magnetic garnet material, faraday rotator, optical device, bismuth-substituted rare earth-iron-garnet single-crystal film and method for producing the same and crucible for producing the same

A method for producing a bismuth-substituted rare earth-iron-garnet single-crystal film in a mode of liquid-phase epitaxial growth, which comprises:

• a step of putting a starting material composition for the bismuth-substituted rare earth-iron-garnet single crystal film and a flux composition into a crucible that contains Au at least in the site thereof to be kept in contact with a melt therein:
• a step of heating and melting the starting material composition to be a melt:
• a step of cooling the melt to a temperature at which the bismuth-substituted rare earth-iron-garnet single crystal film grows;
• and
• a step of contacting the thus cooled melt with a single-crystal film-growing substrate to thereby make the intended bismuth-substituted rare earth-iron-garnet single crystal film grow on the substrate,
• for which a non-lead flux composition is used for liquid-phase epitaxial growth so as to prevent the film from being contaminated with impurities from flux.

A method for producing a bismuth-substituted rare earth-iron-garnet single-crystal film in a mode of liquid-phase epitaxial growth, which comprises:

• a step of putting a starting material composition for the bismuth-substituted rare earth-iron-garnet single crystal film and a flux composition into a crucible that contains Au at least in the site thereof to be kept in contact with a melt therein:
• a step of heating and melting the starting material composition to be a melt:
• a step of cooling the melt to a temperature at which the bismuth-substituted rare earth-iron-garnet single crystal film grows;
• and
• a step of contacting the thus cooled melt with a single-crystal film-growing substrate to thereby make the intended bismuth-substituted rare earth-iron-garnet single crystal film grow on the substrate,
• for which a non-lead flux composition is used for liquid-phase epitaxial growth so as to prevent the film from being contaminated with impurities from flux.