Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)
AssigneesNational Institute of Advanced Industrial Science and Technology, Japan Science and Technology Agency
InventorsTaro Nagahama, Shinji Yuasa, Yoshishige Suzuki
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Abstract
By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.
Claims6
A tunnel magnetoresistive element having a substrate, a double underlayer including an amorphous MgO layer and a (001)-oriented MgO layer, and a tunnel magnetoresistive effect portion, in this order.
Dependencies are inferred from the claim text.