# US 7,514,119 B2 · Method and apparatus for using solution based precursors for atomic layer deposition

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- Number: US 7,514,119 B2
- Document ID: US7514119B2
- Status: Granted
- Kind: B2
- Application number: 11/400,904
- Filed: 2006-04-10
- Published: 2006-11-30
- Granted: 2009-04-07
- Earliest claimed: 2005-04-29
- Assignees: Linde Aktiengesellschaft
- Inventors: Ce Ma; Qing Min Wang; Patrick J. Helly; Richard Hogle
- Web page: https://patentgrep.com/patent/US7514119B2

## CPC

- C23C 16/45544: {characterized by the apparatus}
- C23C 16/448: characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C 16/45525: {Atomic layer deposition [ALD]}
- Y10T 428/8305: Miscellaneous [e.g., treated surfaces, etc.]
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

## Claims

### Claim 1

A method of atomic layer deposition comprising:
alternately delivering a vaporized precursor solution and a vaporized reaction solution to a deposition chamber;
forming a monolayer of components of the precursor solution and reaction solution on surface of a substrate in the deposition chamber; and
repeating until a thin film of a predetermined thickness is formed;
wherein the vaporized precursor solution comprises [(t-Bu)Cp]2HfMe2 dissolved in ethylcyclohexane or octane and wherein the thin film is HfO2; and
wherein the precursor solution is delivered to a vaporizer at room temperature and vaporized without decomposition or condensation.