Method for forming semiconductor film and use of semiconductor film
AssigneeKansai Paint Co., Ltd.
InventorsMasahide Kawaraya, Iwao Hayashi
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Abstract
The present invention provides a process for forming a semiconductor film, comprising the steps of applying a semiconductor particle dispersion liquid to a substrate surface by spray coating in such a manner that the atomized droplets of the dispersion liquid discharged from the spray coater have a mean diameter of about 30 μm or less, and drying the coating to form a porous semiconductor film; and use of the semiconductor film obtained by the process.
Claims6
A photoelectrode for dye-sensitized solar cells, comprising a porous titanium oxide film formed on an electrically conductive transparent layer formed on a transparent high polymer film, the porous titanium oxide film being obtained by a process comprising the steps of:
- applying a titanium oxide particle dispersion liquid in methanol and/or ethanol to the surface of the electrically conductive transparent layer by spray coating in such a manner that the atomized droplets of the dispersion liquid discharged from the spray coater have a mean diameter of about 1 μm to about 25 μm;
- and
- drying the coating by heating at a temperature of about 130° C. to about 180° C. or by irradiation with electromagnetic waves to form a porous titanium oxide film.
Dependencies are inferred from the claim text.