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AssigneeNippon Mining & Metals Co., Ltd.
InventorsYuichiro Shindo, Kouichi Takemoto
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Provided is a manufacturing method of high purity oxide powder including the steps of subjecting a raw material such as Zn-containing scrap to acid leaching or electrolytic extraction, thereafter performing solvent extraction and activated carbon treatment thereto in order to remove impurities, neutralizing the resultant solution freed of impurities with an alkaline solution to obtain zinc hydroxide, and firing the zinc hydroxide to obtain zinc oxide. Provided are high purity zinc oxide efficiently freed of impurities, in particular C, Cl, S and Pb impurities, at low cost and the manufacturing method thereof; a target manufactured by firing the high purity zinc oxide; and a high purity zinc oxide thin film obtained by the sputtering the target.
High purity zinc oxide powder having an impurity content excluding gas components of N, C, Cl, S and P of less than 10 wtppm, a total content of gas components of C, Cl and S of less than 100 wtppm, a content of Na of 1 wtppm or less, and a content of K of 1 wtppm or less.
A manufacturing method of high purity zinc oxide powder including the steps of subjecting a raw material such as Zn-containing scrap to acid leaching with nitric acid or electrolytic extraction with ammonium nitrate solution, thereafter performing solvent extraction and activated carbon treatment thereto in order to remove impurities, neutralizing the resultant solution freed of impurities with ammonium hydroxide to obtain zinc hydroxide, and firing the zinc hydroxide to obtain zinc oxide.
A high purity zinc oxide sputtering target having an impurity content of N, C, CI, S and P, excluding gas components, of less than 10 wtppm, a total content of gas components C, Cl and S of less than 100 wtppm, a content of Na of 1 wtppm or less, and a content of K of 1 wtppm or less.
A high purity zinc oxide thin film having an impurity content of N, C, Cl, S and P, excluding gas components, of less than 10 wtppm, a total content of gas components C, Cl and S of less than 100 wtppm, a content of Na of 1 wtppm or less, and a content of K of 1 wtppm or less.
Dependencies are inferred from the claim text.