Flux assisted solid phase epitaxy

A flux assisted solid phase epitaxial growth method, characterized in that it comprises the steps of:

• depositing an amorphous thin film made of an objective substance and a flux of a substance producing a eutectic with said objective substance but not producing any compound with said objective substance, on a substrate at a temperature less than a eutectic point of said objective and flux substances, and
• heat-treating said substrate at a temperature not less than the eutectic point of said objective and flux substances and less than the lower melting point of said objective and flux substances,
• wherein said objective substance is a multi-component oxide which contains Bi as a constituent element, and said flux is of the substance producing the eutectic with said multi-component oxide containing Bi as a constituent element and not producing any compound therewith.

A flux assisted solid phase epitaxial growth method, characterized in that it comprises the steps of:

• depositing a thin film made of an objective substance and a thin film made of a flux of a substance producing a eutectic with said objective substance but not producing any compound with said objective substance, on a substrate at a temperature less than a eutectic point of said objective and flux substances, and
• heat-treating said substrate at a temperature not less than the eutectic point of said objective and flux substances and less than the lower melting point of said objective and flux substances,
• wherein said objective substance is a multi-component oxide which contains Bi as a constituent element, and said flux is of the substance producing the eutectic with said multi-component oxide containing Bi as a constituent element and not producing any compound therewith.