# US 7,501,644 B2 · Apparatus and method for controlled particle beam manufacturing

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- Number: US 7,501,644 B2
- Document ID: US7501644B2
- Status: Granted
- Kind: B2
- Application number: 11/841,593
- Filed: 2007-08-20
- Published: 2007-12-06
- Granted: 2009-03-10
- Earliest claimed: 2005-07-08
- Assignees: NexGen Semi Holding, Inc.
- Inventors: Michael John Zani; Mark Joseph Bennahmias; Mark Anthony Mayse; Jeffrey Winfield Scott
- Web page: https://patentgrep.com/patent/US7501644B2

## CPC

- H01J 37/3056: {for microworking, e. g. etching of gratings or trimming of electrical components}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 40/00: Manufacture or treatment of nanostructures
- H01J 37/045: {Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge}
- H01J 37/3007: {Electron or ion-optical systems}
- H01J 37/304: Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals
- H01J 37/3172: {Maskless patterned ion implantation}
- H01J 37/3174: {Particle-beam lithography, e.g. electron beam lithography}
- H01J 37/3177: {Multi-beam, e.g. fly's eye, comb probe}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/0221: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]}
- H10P 30/20: into semiconductor materials, e.g. for doping
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/21: {of electrically active species}
- H01J 2237/0432: High speed and short duration
- H01J 2237/047: Changing particle velocity
- H01J 2237/30472: Controlling the beam
- H01J 2237/31713: Focused ion beam
- H01J 2237/31732: Depositing thin layers on selected microareas
- H01J 2237/31735: Direct-write microstructures
- H01J 2237/31737: using ions
- H01J 2237/3174: Etching microareas
- H01J 2237/31749: Focused ion beam
- H01J 2237/3175: Lithography
- H01J 2237/31766: Continuous moving of wafer
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10D 86/01: Manufacture or treatment
- H10P 90/1908: {using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]}
- H10W 10/061: {using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- Y10T 428/24802: Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T 428/24893: including particulate material
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

## Claims

### Claim 1

A method of depositing a material on a workpiece, the method comprising:
forming a digital beam comprising particles;
directing the digital beam towards areas of the workpiece in a pattern in an exposure chamber; and
applying a reactant gas to the workpiece, the reactant gas reacting with the areas of the workpiece to deposit the material.

### Claim 2 (depends on 1)

The method of claim 1, wherein a dosage of the digital beam is less than about 5×1017 charged particles/cm2.

### Claim 3 (depends on 1)

The method of claim 1, wherein a dosage of the digital beam is less than about 5×1016 charged particles/cm2.

### Claim 4 (depends on 1)

The method of claim 1, wherein a dosage of the digital beam is less than about 5×1014 charged particles/cm2.

### Claim 5 (depends on 1)

The method of claim 1, wherein a dosage of the digital beam is less than about 5×1013 charged particles/cm2.

### Claim 6 (depends on 1)

The method of claim 1, wherein a dosage of the digital beam is less than about 5×1012 charged particles/cm2.

### Claim 7 (depends on 1)

The method of claim 1, wherein a dosage of the digital beam is less than about 5×1011 charged particles/cm2.

### Claim 8 (depends on 1)

The method of claim 1, wherein a dosage of the digital beam is less than about 5×1010 charged particles/cm2.

### Claim 9 (depends on 1)

The method of claim 1, further comprising, before applying the reactant gas, transferring the workpiece to a second chamber.

### Claim 10 (depends on 1)

The method of claim 1, wherein the workpiece is resistless while directing the digital beam.

### Claim 11 (depends on 1)

The method of claim 1, wherein applying the reactant gas comprises causing a multi-nucleation activation deposition process of material growth in the areas exposed to the digital beam of the workpiece.

### Claim 12 (depends on 1)

The method of claim 1, wherein applying the reactant gas comprises introducing a plurality of precursor gases.

### Claim 13 (depends on 1)

The method of claim 1, wherein applying the reactant gas comprises causing a multi-atomic layer deposition of material growth in the areas.

### Claim 14 (depends on 13)

The method of claim 13, further comprising increasing temperature while applying the reactant gas.

### Claim 15 (depends on 1)

The method of claim 1, wherein forming the digital beam comprises:
forming a stream of the particles;
collimating the stream along an axis of propagation; and
digitizing the stream.

### Claim 16 (depends on 1)

The method of claim 1, wherein forming the digital beam comprises creating temporally and spatially resolved digital flashes comprising at least one particle per digital flash.

### Claim 17 (depends on 1)

The method of claim 1, wherein directing the digital beam comprises:
deflecting the digital beam using a series of deflection stages disposed longitudinally along an axis of propagation of the beam; and
demagnifying the digital beam.

### Claim 18 (depends on 1)

A workpiece manufactured by the method of claim 1.

### Claim 19

A method of depositing a material onto a workpiece, the method comprising:
forming a beam comprising particles;
directing the beam towards a surface of the workpiece in a pattern in a chamber, the particles chemically modifying portions of the surface; and
applying a reactant to the workpiece, the reactant reacting with the chemically modified portions to cause material deposition.

### Claim 20 (depends on 19)

The method of claim 19, further comprising, before applying the reactant gas, transferring the workpiece to a second chamber.

### Claim 21 (depends on 19)

The method of claim 19, wherein forming the beam comprises forming a digital beam.

### Claim 22 (depends on 19)

A workpiece manufactured by the method of claim 19.

### Claim 23

A method of processing to deposit a material onto a workpiece, the method comprising:
directing a digital beam comprising charged particles onto the workpiece in a pattern in a first chamber;
transferring the workpiece to a second chamber; and
applying a reactant gas to deposit material onto the area exposed by the digital beam on the workpiece surface.

### Claim 24

A method of depositing a material onto a workpiece, the method comprising:
directing a beam comprising charged particles onto a surface of the workpiece in a pattern in a first chamber to chemically modify portions of the surface;
transferring the workpiece to a second chamber; and
applying a reactant to the workpiece, the reactant reacting with the chemically modified portions to cause material deposition.