US 7,501,328 B2 · Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization

Abstract

Embodiments of the present invention provide mesoscale or microscale three-dimensional structures (e.g. components, device, and the like). Embodiments relate to one or more of (1) the formation of such structures which incorporate sheets of dielectric material and/or wherein seed layer material used to allow electrodeposition over dielectric material is removed via planarization operations; (2) the formation of such structures wherein masks used for at least some selective patterning operations are obtained through transfer plating of masking material to a surface of a substrate or previously formed layer, and/or (3) the formation of such structures wherein masks used for forming at least portions of some layers are patterned on the build surface directly from data representing the mask configuration, e.g. in some embodiments mask patterning is achieved by selectively dispensing material via a computer controlled inkjet nozzle or array or via a computer controlled extrusion device.

Claims3

Dependent claims

A process for forming a multilayer three-dimensional structure, comprising:

(a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers;
and
(b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;
wherein the formation of at least one layer comprises:
(i) forming a desired pattern of dielectric material on the substrate or on previously deposited material wherein the patterning of the dielectric results in at least one void in the dielectric material that exposes a portion of the substrate or previously deposited material;
(ii) applying a seed layer material to the dielectric material;
(iii) depositing a conductive material into the at least one void in the dielectric;
and
(iv) after depositing the conductive material, removing at least a portion of the seed layer material located on the dielectric material
(v) selectively etching into the conductive material to form at least one second void;
(vi) depositing a seed layer into the at least second void;
and
(vii) depositing a second conductive material into the at least one second void.

10 more elements

Dependencies are inferred from the claim text.

Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization

Life of this patent

Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization

Life of this patent

Abstract

Claims3