Semiconductor device and driving method of the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsRyoji Nomura, Hiroko Abe, Yuji Iwaki, Shunpei Yamazaki
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Abstract
The present invention provides a semiconductor device including a memory that has a memory cell array including a plurality of memory cells, a control circuit that controls the memory, and an antenna, where the memory cell array has a plurality of bit lines extending in a first direction and a plurality of word lines extending in a second direction different from the first direction, and each of the plurality of memory cells has an organic compound layer provided between the bit line and the word line. Data is written by applying optical or electric action to the organic compound layer.
Claims37
A semiconductor device comprising:
- a bit line extending in a first direction;
- a word line extending in a second direction that is different from the first direction;
- a memory cell provided at an intersecting portion of the bit line and the word line;
- and
- a memory element provided in the memory cell,
- wherein the memory element comprises an organic compound layer disposed between the bit line and the word line, and
- wherein the memory element is arranged to change a distance between the bit line and the word line when a voltage is applied between the bit line and the word line.
A semiconductor device comprising:
- a bit line extending in a first direction;
- a word line extending in a second direction that is different from the first direction;
- and
- a memory cell connected with the bit line and the word line,
- wherein the memory cell includes a transistor and a memory element electrically connected to the transistor,
- wherein the memory element has an organic compound layer provided between a pair of conductive layers, and
- wherein the memory element is arranged to change a distance between the pair of conductive layers when a voltage is applied between the pair of conductive layers.
A method for driving a semiconductor device,
- said semiconductor device comprising:
- a bit line extending in a first direction;
- a word line extending in a second direction that is different from the first direction;
- a memory cell provided at an intersecting portion of the bit line and the word line;
- and
- a memory element provided in the memory cell,
- wherein the memory element comprises an organic compound layer provided between the bit line and the word line, and
- wherein the memory element is arranged to change a distance between the bit line and the word line when a first voltage is applied between the bit line and the word line,
- said method comprising the steps of:
- writing data by applying the first voltage between the bit line and the word line to change an electric resistance of the memory element, and
- reading data by applying a second voltage between the bit line and the word line to read the electric resistance of the memory element.
A method for driving a semiconductor device,
- said semiconductor device comprising:
- a bit line extending in a first direction;
- a word line extending in a second direction that is different from the first direction;
- and
- a memory cell connected with the bit line and the word line,
- wherein the memory cell includes a transistor and a memory element electrically connected to the transistor,
- wherein the memory element comprises an organic compound layer provided between a pair of conductive layers, and
- wherein the memory element is arranged to change a distance between the pair of conductive layers when a first voltage is applied between the pair of conductive layers,
- said method comprising the steps of:
- writing data by applying the first voltage between the pair of conductive layers to change an electric resistance of the memory element, and
- reading data by applying a second voltage between the pair of conductive layers to read the electric resistance of the memory element.
A semiconductor device comprising a plurality of memory elements,
- wherein the plurality of memory elements are formed over an insulating substrate and comprise an organic compound layer disposed between a first electrode and a second electrode, and
- wherein the plurality of memory elements are arranged to change a distance between the first electrode and the second electrode when a voltage is applied between the first electrode and the second electrode.
A method for driving a semiconductor device comprising a plurality of memory elements wherein the plurality of memory elements are formed over an insulating substrate and comprise an organic compound layer disposed between a first electrode and a second electrode,
- the method comprising the step of changing a distance between the first electrode and the second electrode by applying a voltage between the first electrode and the second electrode.
Dependencies are inferred from the claim text.