Solution-based deposition process for metal chalcogenides
AssigneeInternational Business Machines Corporation
InventorsDavid B. Mitzi, Simone Raoux
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Abstract
A solution of a hydrazine-based precursor of a metal chalcogenide is prepared by adding an elemental metal and an elemental chalcogen to a hydrazine compound. The precursor solution can be used to form a film. The precursor solutions can be used in preparing field-effect transistors, photovoltaic devices and phase-change memory devices.
Claims20
A method of preparing a solution of a hydrazonium precursor of a metal chalcogenide which comprises adding an elemental metal and an elemental chalcogen to a hydrazine compound.
A method of depositing a film of a metal chalcogenide which comprises preparing a solution of a hydrazinuim precursor of a metal chalcogenide which comprises adding an elemental metal and an elemental chalcogen to a hydrazine compound to provide a solution of said precursor of the metal chalcogenide;
- applying a solution of said precursor onto a substrate to produce a film of said precursor;
- and annealing the film of the precursor to produce the metal chalcogenide film on the substrate.
A method of preparing an improved field-effect transistor of the type having a source region and a drain region, a channel layer extending between the source region and the drain region, the channel layer including a semiconducting material, a gate region, disposed in spaced adjacency to the channel layer, an electrically insulating layer between the gate region and the source region, drain region and channel layer, wherein the method comprises:
- preparing a channel layer comprising a film of a metal chalcogenide semiconducting material which comprises preparing a solution of a precursor of a metal chalcogenide by adding an elemental metal and an elemental chalcogen to a hydrazine compound to provide a solution of said precursor of the metal chalcogenide;
- applying a solution of said precursor onto a substrate to produce a film of said precursor;
- and annealing the film of the precursor to produce the metal chalcogenide film on said substrate.
Dependencies are inferred from the claim text.