Semiconductor optical devices and method for forming

A method comprising:

• providing an insulating layer having a surface;
• forming a light emitting fin region on the surface of the insulating layer that has a height that is greater than a width thereof;
• forming a conformal semiconductor layer overlying and adjacent the light emitting fin region;
• doping the conformal semiconductor layer using two angled implants of opposite conductivity type and respectively angled to opposite sides of the light emitting fin region;
• partially removing the conformal semiconductor layer adjacent the light emitting fin region and removing the conformal semiconductor layer above the light emitting fin region, the partially removing leaving a remainder thereof which is used to form a first light emitting fin sidewall electrode having a first conductivity type on the insulating layer and contacting a first side of the light emitting fin region, and form a second light emitting fin sidewall electrode having a second conductivity type on the insulating layer and contacting a second side of the light emitting fin region, the second side opposite the first side;
• and
• forming a vertically integrated field-effect transistor adjacent the semiconductor optical device.

A method comprising:

• providing an insulating layer having a surface;
• forming a light emitting fin region on the surface of the insulating layer that has a height that is greater than a width thereof;
• forming a conformal semiconductor layer overlying and adjacent the light emitting fin region;
• doping the conformal semiconductor layer using two angled implants of opposite conductivity type and respectively angled to opposite sides of the light emitting fin region;
• partially removing the conformal semiconductor layer adjacent the light emitting fin region and removing the conformal semiconductor layer above the light emitting fin region, the partially removing leaving a remainder thereof which is used to form a first light emitting fin sidewall electrode having a first conductivity type on the insulating layer and contacting a first side of the light emitting fin region, and forming a second light emitting fin sidewall electrode having a second conductivity type on the insulating layer and contacting a second side of the light emitting fin region, the second side opposite the first side to form a semiconductor optical device;
• and
• forming a light sensing element overlying the insulating layer and adjacent the semiconductor optical device.