Cyclodextrin derivative, photoresist composition including the cyclodextrin derivative and method of forming a pattern using the photoresist composition
AssigneeSamsung Electronics Co., Ltd.
InventorsHyo-Jin Yun, Young-Gil Kwon, Young-Ho Kim, Hong Lee, Do-Young Kim
Life of this patent
Estimating the term…
Abstract
A photoresist film is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of a cyclodextrin derivative, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent. The cyclodextrin derivative includes a β-cyclodextrin moiety and at least one alkyl carbonate group.
Claims11
The cyclodextrin derivative for a photoresist comprising:
- a β-cyclodextrin moiety;
- and at least one alkyl carbonate group, wherein the cyclodextrin derivative has a chemical structure represented by Formula (1),
- wherein R1 represents an alkyl group comprising 1 to 10 carbon atoms.
The cyclodextrin derivative for a photoresist comprising:
- a βcyclodextrin moiety;
- and at least one alkyl carbonate group, wherein the cyclodextrin derivative is prepared by combining β-cyclodextrin represented by Formula (2) with a tert-alkyl carbonate represented by Formula (3),
- wherein in the Formula (3), each of R2, R3 and R4 independently represents an alkyl group comprising 1 to 3 carbon atoms.
The cyclodextrin derivative for a photoresist comprising:
- a β-cyclodextrin moiety;
- and at least one alkyl carbonate group, wherein the cyclodextrin derivative is prepared by reacting β-cyclodextrin with di-tert-butyl dicarbonate, represented by Formula (4), in an organic solvent
A photoresist composition comprising:
- about 7 percent to about 14 percent by weight of a cyclodextrin derivative having a chemical structure represented by Formula (1);
- about 0.1 percent to about 0.5 percent by weight of a photoacid generator;
- and
- a remainder of an organic solvent,
- wherein R1 represents an alkyl group comprising 1 to 10 carbon atoms.
A method of forming a pattern on a substrate, the method comprising:
- forming a photoresist film on an object layer by coating the object layer with a photoresist composition comprising about 7 percent to about 14 percent by weight of a cyclodextrin derivative having a chemical structure represented by Formula (1), about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent,
- wherein R1 represents an alkyl group having 1 to 10 carbon atoms;
- partially exposing the photoresist film to light by performing an exposure process;
- developing the photoresist film using a developing solution to form a photoresist pattern on the object layer;
- and
- partially etching the object layer using the photoresist pattern as an etching mask to form the pattern on the substrate.
Dependencies are inferred from the claim text.