Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
AssigneeE.I. du Pont de Nemours and Company
InventorsYueli Wang, Kenneth Warren Hang
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Abstract
The present invention is directed to an electroconductive thick film composition comprising: (a) electroconductive metal particles selected from (1) Al, Cu, Au, Ag, Pd and Pt; (2) alloy of Al, Cu, Au, Ag, Pd and Pt; and (3) mixtures thereof; (3) glass frit wherein said glass frit is Pb-free; dispersed in (d) an organic medium, and wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a semiconductor device(s) (for example, a solar cell) comprising said electrode.
Claims7
A thick film conductive composition comprising:
- (a) electroconductive metal particles comprising a mixture of Ag particles and Al particles
- (b) glass frit wherein said glass frit is Pb-free;
- dispersed in
- (c) an organic medium,
- wherein the average diameter of said electroconductive metal particles is in the range of 0.5-10.0 μm,
- wherein said glass frit comprises, in weight percent total glass fit composition:
- SiO2 0.5- 35, Al2O3 0-5, B2O3 1-15, ZnO 0-15, and Bi2O3 55-90, and further comprising:
- (d) one or more inorganic additives, wherein said inorganic additives are selected from the group consisting of (1) Cu and Bi;
- (2) compounds that can generate elemental metals selected from Cu and Bi;
- (3) oxides of Cu and Bi;
- and (4) mixtures thereof.
Dependencies are inferred from the claim text.