Chemical vapor deposited film based on a plasma CVD method and method of forming the film

A vapor deposited film formed on the surface of a substrate based on a plasma CVD method by using an organometal compound gas and an oxidizing gas as reaction gases;

• wherein
• said vapor deposited film has a barrier layer region positioned on the side of the substrate and an outer surface protection layer region positioned on the surface of said barrier layer region;
• and
• on the basis of three elements of a metal element (M) stemming from said organometal compound, oxygen (O) and carbon (C), said barrier layer region has an (M+O) concentration which is higher than that of the outer surface protection layer region, the (M+O) concentration is substantially continuously varying in an interfacial portion between said barrier layer region and the outer surface protection layer region, and said outer surface protection layer region has a (C) concentration of not lower than 15 element %.