Multiple wavelengths semiconductor laser device
AssigneeKabushiki Kaisha Toshiba
InventorAkira Tanaka
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AssigneeKabushiki Kaisha Toshiba
InventorAkira Tanaka
Estimating the term…
In one aspect of the present invention, a multiple wavelengths semiconductor laser device may include a supporting member, a first semiconductor laser element provided on a first substrate, mounted on the supporting member as face up, and configured to emit a first wavelength laser, and a second semiconductor laser element provided on a second substrate which has lower heat conductivity ratio than the first substrate, mounted on the supporting member as face down, and configured to emit a second wavelength laser toward in substantially a same direction as the first wavelength laser, and in another aspect of the invention, a multiple wavelengths semiconductor laser device may include a supporting member, a first semiconductor laser element provided on a first substrate, mounted on the supporting member as face up, and configured to emit a first wavelength laser, a second semiconductor laser element provided on a second substrate which has lower heat conductivity ratio than the first substrate, mounted on the supporting member as face down, and configured to emit a second wavelength laser in substantially a same direction as the first wavelength laser, and a third semiconductor laser element provided on the second substrate, as face down, and configured to emit a third wavelength laser in substantially a same direction as the first wavelength laser.
A multiple wavelengths semiconductor laser device, comprising:
A multiple wavelengths semiconductor laser device, comprising:
Dependencies are inferred from the claim text.