Method for performing a command cancel function in a DRAM

Abstract

A method for performing a common cancel (CC) function on a dynamic random access memory (DRAM) semiconductor device to improve reliability and speed of a memory system. The CC function rakes advantage of the intrinsic delays associated wit memory read operations at high clock frequencies, and the increased write latency commensurate with increased read latencies where non-zero larencies for read and write operations are the norm by permitting address and command ECC structures to operate in parallel with the address and command re-drive circuitt The CC function is extendable to future DDR2 and DDR3 operating requirements in which latency of higher frequency modes will increase due to the shift from 2 bit pre-fetch to 4 and 8 bit pre-fetch architecture.

Dependencies are inferred from the claim text.