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US 7,480,182 B2Granted
NOR flash memory devices in which a program verify operation is performed on selected memory cells and program verify methods associated therewith
AssigneeSamsung Electronics Co., Ltd.
InventorsBo-Geun Kim, Heung-Soo Lim, Jae-Woo Lim
Life of this patent
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Abstract
A program operation for a NOR flash memory device is verified by programming data in a memory cell, performing a dummy verify operation on the memory cell, and performing a program verify operation on the memory cell based on a result of the dummy verify operation.
Claims20
A method of verifying a program operation of a NOR flash memory device, comprising:
- programming data in a memory cell;
- performing a dummy verify operation on the memory cell;
- controlling a sense amplifier connected to the memory cell to be disabled based on a result of the dummy verify operation;
- and
- performing a program verify operation on the memory cell based on a result of the dummy verify operation;
- wherein the program verify operation is performed only when the sense amplifier connected to the memory cell is enabled.
3 more elements
A method of verifying a program operation of a NOR flash memory device, comprising:
- programming data in a plurality of memory cells that share a source line;
- enabling sense amplifiers respectively connected to the plurality of memory cells;
- applying a dummy verify voltage to the plurality of memory cells;
- performing a dummy verify operation on the plurality of memory cells responsive to application of the dummy verify voltage;
- determining if any of the memory cells is on based on a result of the dummy verify operation;
- for each of the memory cells that is determined to be on, disabling the sense amplifier that is connected thereto;
- applying a program verify voltage to the plurality of memory cells;
- and
- performing a program verify operation on the plurality of memory cells responsive to application of the program verify voltage.
6 more elements
A NOR flash memory device, comprising:
- a plurality of memory cells that share a source line;
- a plurality of sense amplifiers respectively connected to the plurality of memory cells;
- and
- a voltage generating circuit that is configured to supply a word line voltage to the plurality of memory cells and a dummy verify voltage to the plurality of memory cells before a program verify operation;
- wherein the plurality of sense amplifiers are configured to selectively supply a current to the plurality of memory cells during the program verify operation based on a result of a dummy verify operation that uses the dummy verify voltage.
2 more elements
Dependencies are inferred from the claim text.