Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory

A non-volatile memory system, comprising:

• a first plurality of non-volatile storage elements programmable to a plurality of physical states;
• a second plurality of non-volatile storage elements adjacent to said first plurality of non-volatile storage elements and programmable to said plurality of physical states;
• and
• managing circuitry in communication with said first plurality of non-volatile storage elements and said second plurality of non-volatile storage elements, said managing circuitry responds to a request to read said first plurality of storage elements by reading said second plurality of storage elements;
• wherein if reading said second plurality indicates one or more predetermined levels of programming of a non-volatile storage element of said second plurality that is adjacent to a particular storage element of said first plurality, said managing circuitry reads said particular storage element without using compensation for coupling when reading at a level between a first programmed state and a second programmed state and reads said particular storage element using compensation for coupling when reading at a level between said second programmed state and a third programmed state;
• and
• wherein if reading said second plurality does not indicate said one or more predetermined levels of programming of said non-volatile storage element that is adjacent to said particular storage element, said managing circuitry reads said particular storage element without using compensation for coupling when reading at said level between said first and second programmed states and reads said particular storage element without using compensation for coupling when reading at said level between said second and third programmed states.

A non-volatile memory system, comprising:

• a plurality of non-volatile storage elements capable of storing data in at least four physical states, said plurality including a first non-volatile storage element adjacent to a second non-volatile storage element of said plurality;
• managing circuitry in communication with said plurality of non-volatile storage elements, said managing circuitry reads from said second non-volatile storage element as part of determining data stored in said first non-volatile storage element;
• if reading from said second non-volatile storage element indicates one or more predetermined levels of programming, said managing circuitry determines data of said first non-volatile storage element using a result of applying a first reference voltage to said first non-volatile storage element and a result of applying a second reference voltage with an offset to said first non-volatile storage element, said first reference voltage is between a first programmed state and a second programmed state and said second reference voltage with said offset is between said second programmed state and a third programmed state;
• and
• if reading from said second non-volatile storage element does not indicate said one or more predetermined levels of programming, said managing circuitry determines data of said first non-volatile storage element using a result of applying said first reference voltage to said first non-volatile storage element and applying said second reference voltage to said first non-volatile storage element, said second reference voltage is between said second programmed state and said third programmed state.