Magnetic tunnel junction device and writing/reading for said device
AssigneeCommissariat a l'Energie Atomique
InventorsBernard Dieny, Ricardo Sousa, Dana Stanescu
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AssigneeCommissariat a l'Energie Atomique
InventorsBernard Dieny, Ricardo Sousa, Dana Stanescu
Estimating the term…
The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5W/m/° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (I1), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (I2) in the opposite direction.
A magnetic device comprising in succession a first electrode, a magnetic tunnel junction comprising in succession a first magnetic layer forming a reference layer and having a fixed magnetization, an electrically insulating layer forming a tunnel barrier and a second magnetic layer forming a storage layer and having a reversible direction magnetization, an intermediate layer, and a second electrode, wherein the intermediate layer is nonmagnetic and constitutes a first thermal barrier comprising a material having a thermal conductivity lower than 5 W/m/° C.
A magnetic device comprising in succession a first electrode, a magnetic tunnel junction comprising in succession a first magnetic layer forming a reference layer and having a fixed magnetization, an electrically insulating layer forming a tunnel barrier and a second magnetic layer forming a storage layer and having a reversible direction magnetization, an intermediate layer, and a second electrode, wherein the intermediate layer constitutes a first thermal barrier comprising a material having a thermal conductivity lower than 5 W/m/° C., and wherein the first thermal barrier comprises an anti-ferromagnetic layer, and a magnetically decoupling layer between the first thermal barrier and the second magnetic layer.
A magnetic device comprising in succession:
Dependencies are inferred from the claim text.