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US 7,480,174 B2Granted
Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated
AssigneeSamsung Electronics Co., Ltd.
InventorsMoon-Sook Lee, In-Gyu Baek
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Abstract
A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to establish a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed.
Claims5
A method of programming a memory device including a data storage material layer, the method comprising:
- applying a first electric pulse to the data storage material layer for a first period to reduce a resistance of the data storage material layer;
- and
- applying a second electric pulse to the data storage material layer for a second period, longer than the first period, to increase the resistance of the data storage material layer.
A memory device comprising:
- a lower electrode on a substrate;
- an upper electrode on the lower electrode;
- and
- a data storage material layer between the lower electrode and the upper electrode configured to provide relatively low resistance responsive to a first electric pulse applied to the data storage material layer for a first period and to provide a relatively high resistance responsive to a second electric pulse applied to the data storage material layer for a second period, longer than the first period.
1 more element
Dependencies are inferred from the claim text.