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US 7,480,167 B2Granted
Set programming methods and write driver circuits for a phase-change memory array
AssigneeSamsung Electronics Co., Ltd.
InventorSu-Jin Ahn
Life of this patent
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Abstract
Exemplary embodiments of the present invention provide set programming methods and write driver circuits for a phase-change memory array. An exemplary embodiment of a set programming method may comprise applying a set current pulse to the phase-change cells, which may cause phase-change cells, which may be included within the phase-change memory array, to transition to the set resistance state. Exemplary embodiments of the set programming methods and/or write driver circuits may result in the phase-change cells to transition to the set resistance state.
Claims14
A current controller comprising:
- a first transistor having a first terminal connected to a power supply voltage and a second terminal connected to the gate of the first transistor;
- a second transistor having a first terminal connected to the power supply voltage and a second terminal adapted to output a set current pulse, and a gate connected to the gate of the first transistor;
- and
- a control transistor having a first terminal connected to the second terminal of the first transistor and a second terminal connected to a ground voltage, wherein the function of the control transistor is determined by at least a set voltage pulse applied to the gate of the control transistor, wherein the set current pulse includes a plurality of stages in which a magnitude of the set current pulse is gradually decreased.
1 more element
Dependencies are inferred from the claim text.