Transflective liquid crystal display and method of fabricating the same
AssigneeTPO Displays Corp.
InventorsChi-Jain Wen, Dai-Liang Ting, Gwo-long Lin, Shyuan-Jeng Ho, I-Wei Wu
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Abstract
A transflective liquid crystal display and method of fabricating the same. The pixel region of the transflective comprises a thin film transistor, a transmissive electrode, and a reflective electrode, wherein the overlap of the reflective electrode and the transparent electrode composes a reflective region and the non-overlapping region of the reflective electrode and the transparent electrode form a transmissive region, and the transparent electrode and the source and the drain regions of the thin film transistor are formed of the same silicon layer.
Claims22
A transflective liquid crystal display comprising:
- a lower substrate and an upper substrate opposing each other;
- a plurality of pixel regions on the lower substrate;
- a thin film transistor having a silicon layer;
- a transparent electrode formed in the pixel region, wherein the transparent electrode is conductively connected to the thin film transistor;
- and
- a reflective electrode formed over a portion of the transparent electrode, wherein the reflective electrode is conductively connected to the same thin film transistor;
- wherein the overlap of the reflective electrode and the transparent electrode forms a reflective region and the non-overlapping region of the reflective electrode and the transparent electrode form a transmissive region;
- and
- the transparent electrode is a conductive silicon layer formed from the same layer as the silicon layer of the thin film transistor.
A method for fabricating a transflective liquid crystal display, comprising steps of:
- providing a substrate, comprising a plurality of pixels with a transmissive region and a reflective region;
- forming a silicon layer on the pixels;
- forming a first insulating layer on the substrate covering the silicon layer;
- forming a first conductive layer on the first insulating layer, and defining the first conductive layer into at least two scan lines and a gate electrode;
- forming a thin film transistor comprising a doped silicon layer by the side of the gate electrode, wherein the doped silicon at one side of the gate electrode serves as a drain region, the doped silicon at the other side of the gate electrode serves as a source region, and the doped silicon covering a large portion of the pixels serves as a transparent electrode, and wherein the transparent electrode is conductively connected to the thin film transistor;
- forming a second insulating layer on the first insulating layer covering the gate electrode;
- forming a first contact plug, perforating through the second insulating layer and the first insulating layer to the source and drain region;
- forming a second conductive layer on the second insulating layer, and defining the second conductive layer into at least two data lines, a drain electrode, and a source electrode, wherein the data lines and the scan lines intersect and form a pixel region;
- forming a passivation insulating layer on the second insulating layer covering the data lines, the drain electrode, and the source electrode;
- removing a portion of the passivation insulating layer, the second insulating layer, and the first insulating layer exposing the transparent electrode;
- and
- forming a reflective electrode on the passivation insulating layer, wherein the reflective electrode is located within the reflective region, and conductively connected to the same thin film transistor.
Dependencies are inferred from the claim text.