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US 7,479,844 B2Granted
Method to improve characteristics of PIN diode switches, attenuators, and limiters by control of nodal signal voltage amplitude
AssigneeThe Boeing Company
InventorBrian K. Kormanyos
Life of this patent
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Abstract
A method to improve characteristics of PIN diode switches, attenuators, and limiters via the control of nodal signal voltages by local impedance control.
Claims8
A method to minimize parasitic capacitance of a PIN diode comprising:
- providing an input and output external nodes;
- selecting a local circuit impedance node that selectively couples a load to the input or output external nodes;
- wherein selecting the local circuit impedance node includes selecting a node where a PIN diode is present;
- varying an impedance at the local circuit impedance node and optimizing applied voltage at the local impedance node;
- wherein the optimized applied voltage is less than a control bias voltage of the PIN diode;
- and adjusting individual local circuit components coupled between the local circuit impedance node and the input and output external nodes to match the varied impedance at the local circuit impedance node to the impedance condition at the input and output external nodes.
3 more elements
A method to minimize parasitic capacitance of a PIN diode, the method comprising:
- providing a circuit with an individual node, an input node and an output node, the individual node selectively coupling a load to the input node or the output node and receive an applied voltage from the coupled input node or the output node;
- varying impedance at the individual node of the circuit and optimizing applied voltage at the individual node;
- and maintaining overall impedance control of the circuit during the varying of the impedance at the individual node;
- wherein the individual node includes a PIN diode;
- and wherein the optimized applied voltage is less than a control bias voltage of the PIN diode.
2 more elements
Dependencies are inferred from the claim text.