Differential amplifier using body-source cross coupling
AssigneeKorea Advanced Institute of Science and Technology
InventorsSongcheol Hong, Dong Ho Lee
Life of this patent
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Abstract
Disclosed herein is a differential amplifier using body-source cross coupling. In a common gate differential amplifier in which common gate amplifiers are implemented in a differential structure, since the bodies of the common gate amplifiers are cross coupled to the sources of the opposite common gate amplifiers, it is possible to increase transconductance due to body effect to improve a gain. Since the potential of the body is equal to that of the source in a DC mode, a breakdown voltage reduction problem is alleviated.
Claims9
A differential amplifier using body-source cross coupling, in which the differential amplifier is comprised of common gate amplifiers in a differential structure, wherein the bodies of the common gate amplifiers are cross coupled to the sources of the opposite common gate amplifiers, and wherein both sources are used as differential input terminals and both drains are used as differential output terminals.
A cascode differential amplifier using body-source cross coupling, in which the cascode differential amplifier is comprised of common source amplifiers and common gate amplifiers in differential structures, wherein the bodies of the common gate amplifiers are cross coupled to the sources of the opposite common gate amplifiers, and wherein both sources are used as differential input and both drains are used as differential output terminals.
The differential amplifier according to 2, wherein NMOSFETs for configuring the differential amplifier are formed in a triple well structure and PMOSFETS are formed in a twin well structure or the triple well structure.
A differential amplifier using body-source cross coupling, in which the differential amplifier is comprised of common gate amplifiers in a differential structure, wherein,
- the bodies of the common gate amplifiers are cross coupled to the sources of the opposite common gate amplifiers;
- and
- NMOSFETs for configuring the differential amplifier are formed in a triple well structure and PMOSFETS are formed in a twin well structure or the triple well structure.
Dependencies are inferred from the claim text.