Semiconductor device including detector circuit capable of performing high-speed operation
AssigneeRenesas Technology Corp.
InventorsMako Okamoto, Fukashi Morishita
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AssigneeRenesas Technology Corp.
InventorsMako Okamoto, Fukashi Morishita
Estimating the term…
A detector circuit and a negative voltage generating circuit capable of performing high-speed operation are provided. A negative voltage generating circuit includes a charge pump circuit, a first voltage divider circuit that makes a voltage division between an output of the charge pump circuit and a power supply to output a detect potential, a reference voltage generating circuit that generates a reference potential, and a comparator circuit that compares the detect potential and the reference potential. The charge pump circuit is driven by an output signal of the comparator circuit and generates the negative voltage. In the first voltage divider circuit, NMOS transistors and make the voltage division between the negative voltage and the power supply to obtain the detect potential.
A semiconductor device comprising a detector circuit that detects a level of a negative voltage, and a reference potential generating circuit that generates a reference potential,
Dependencies are inferred from the claim text.