Bonding pad structure disposed in semiconductor device and related method
AssigneeFaraday Technology Corp.
InventorsMing-Dou Ker, Yuan-Wen Hsiao, Yuh-Kuang Tseng
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Abstract
The present invention discloses a bonding pad structure disposed in a semiconductor device and a method for forming the bonding pad structure. The semiconductor device includes a substrate. The bonding pad structure includes a connection structure and an induction structure. The connection structure allows for a direct connection with a bonding wire. The induction structure is coupled with the connection structure and lowers an effective capacitance between the bonding wire and the substrate.
Claims9
A bonding pad structure disposed in a semiconductor device, the semiconductor device having a substrate, the bonding pad structure comprising:
- a connection structure, for allowing a direct connection from a bonding wire;
- and
- an induction structure, coupled with the connection structure, for lowering an effective capacitance Ceff between the bonding wire and the substrate, the induction structure comprising at least a metal layer;
- wherein the effective capacitance Ceff satisfies a formula as below:
- C
- eff
- =
- 1
- 1
- C
- pad
- +
- 1
- C
- para
- -
- 1
- ω
- 2
-
- L
- wherein Cpad is an effective capacitance between the bonding wire and the metal layer, L is an effective inductance between the metal layer and the substrate, Cpara is a parasitic capacitance within the induction structure, and ω is a signal frequency;
- Ceff is smaller than Cpad in a specific frequency range, and Ceff is substantially equal to zero under a condition of ω=1/√{square root over (LCpara)}.
A method for forming a bonding pad structure in a semiconductor device, comprising:
- forming a connection structure on a substrate of the semiconductor device;
- and
- forming an induction structure comprising at least a metal layer on the connection structure;
- wherein the connection structure and the induction structure form the bonding pad structure, and the connection structure allows a direct connection from a bonding wire;
- wherein an effective capacitance Ceff between the bonding wire and the substrate satisfies a formula as below:
- C
- eff
- =
- 1
- 1
- C
- pad
- +
- 1
- C
- para
- -
- 1
- ω
- 2
-
- L
- wherein Cpad is an effective capacitance between the bonding wire and the metal layer, L is an effective inductance between the metal layer and the substrate, Cpara is a parasitic capacitance within the induction structure, and ω is a signal frequency;
- Ceff is smaller than Cpad in a specific frequency range, and Ceff is substantially equal to zero under a condition of ω=1/√{square root over (LCpara)}.
Dependencies are inferred from the claim text.