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US 7,479,696 B2Granted
Integrated BST microwave tunable devices fabricated on SOI substrate
AssigneeMassachusetts Institute of Technology
InventorsIl-Doo Kim, Ytshak Avrahami, Harry L. Tuller
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Abstract
A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST related materials.
Claims10
A tunable microwave device comprising:
- a SOI structure;
- a thin layer of Si formed on said SOI structure;
- a buffer layer formed on said thin layer of Si, said buffer layer includes oxidized portions of said thin layer of Si;
- and
- a microwave film layer formed on said buffer layer, wherein said microwave layer comprises BST related materials, said buffer layer comprises a thickness greater than 100 nm to prevent chemical reactions between the thin layer of Si and the microwave film layer, and to provide proper orientation and quality of the microwave film layer.
2 more elements
Dependencies are inferred from the claim text.