Deep via seed repair using electroless plating chemistry
AssigneeIntel Corporation
InventorsThomas S. Dory, Kenneth N. Wong
Life of this patent
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Abstract
Methods of forming a continuous seed layer in a high aspect via and its associated structures are described. Those methods comprise forming a recess in a substrate, forming a non-continuous metal layer within the recess, activating the non-continuous metal layer and a plurality of non-deposited regions within the recess, electrolessly depositing a seed layer on the activated non-continuous metal layer and the plurality of non-deposited regions within the recess, and electroplating a metal fill layer over the seed layer, to form a substantially void-free metal filled recess.
Claims7
A microelectronic structure, comprising:
- a recess in a substrate;
- a non-continuous metal layer disposed within the recess;
- an activation layer disposed on the non-continuous metal layer and disposed on at least one non-deposited inner wall region of the recess, wherein the activation layer comprises a thickness of less than about 300 angstroms;
- a seed layer disposed on the activation layer;
- and
- a metal fill layer disposed on the seed layer.
Dependencies are inferred from the claim text.