Solid-state image pickup device and manufacturing method thereof
AssigneeTexas Instruments Incorporated
InventorSatoru Adachi
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AssigneeTexas Instruments Incorporated
InventorSatoru Adachi
Estimating the term…
A solid-state image pickup device that can suppress the dark current with respect to the photo-electrons overflowing from the photodiode, as well as its manufacturing method. Each pixel has the following parts: photodiode, transfer transistor, floating diffusion, accumulating capacitive element, and accumulating transistor. At least one of said source/drain regions that form accumulating transistor is formed as follows: first semiconductor layer 11a of the first electroconductive type divided by element separating insulating film 40 formed on the active region of the semiconductor substrate, second semiconductor layer 42 of the first electroconductive type is formed in the first silicide layer, and a joint plane is formed with the second semiconductor layer as third silicide layer 15 of the second electroconductive type is formed on the outer layer portion of the first silicide layer, so that the depletion layer that extends from the joint plane when the solid-state image pickup device is turned ON does not reach the side surface of the element separating insulating film.
A solid-state image pickup device comprising:
A method of manufacturing a solid-state image pickup device characterized by the comprising:
Dependencies are inferred from the claim text.