Thin film phase change memory cell formed on silicon-on-insulator substrate

A method of forming a memory cell, the method comprising the steps of:

• forming a semiconductor feature, the semiconductor feature defining a groove that divides the semiconductor feature into a first electrode and a second electrode;
• and
• forming phase change material, the phase change material at least partially filling the groove and electrically coupling the first and second electrodes;
• wherein at least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to at least one of the first and second electrodes;
• and
• wherein the semiconductor feature comprises silicon and the groove comprises at least one silicon sidewall with a substantially <111> crystal plane orientation.

An integrated circuit comprising one or more memory cells, at least one of the one or more memory cells comprising:

• a semiconductor feature, the semiconductor feature defining a groove that divides the semiconductor feature into a first electrode and a second electrode;
• and
• phase change material, the phase change material at least partially filling the groove and electrically coupling the first and second electrodes;
• wherein at least a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a switching signal to at least one of the first and second electrodes;
• and
• wherein the semiconductor feature comprises silicon and the groove comprises at least one silicon sidewall with a substantially <111> crystal plane orientation.