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US 7,479,667 B2Granted
Semiconductor device with modified mobility and thin film transistor having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJang-yeon Kwon, Takashi Noguchi, Young-soo Park, Do-young Kim
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Abstract
Provided are a semiconductor device including an active area which is defined as high and low mobility areas and a thin film transistor having the semiconductor device. The mobility of the active area can be lowered to a level enough to satisfy the requirement of the semiconductor device. The lowering of the mobility of the active area can contribute to reducing mobility deviation between semiconductor devices. As a result, the quality of a flat panel display adopting a large-scale semiconductor device can be greatly improved.
Claims7
A thin film transistor comprising:
- a Si-based channel having an active area including at least two high mobility areas and at least one low mobility area along an electron mobility path of a thin film transistor, the two high mobility areas being separated by the low mobility area along the electron mobility path of the Si-based channel;
- a source and a drain which are respectively formed on sides of the Si-based channel along the electron mobility path;
- a gate for applying an electric field to the Si-based channel;
- and
- an insulating layer interposed between the active area and the gate,
- wherein said Si-based channel includes more than two high mobility areas and a plurality of low mobility areas.
3 more elements
Dependencies are inferred from the claim text.