Nitride semiconductor light emitting device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsJae Hoon Lee, Hee Seok Choi, Jeong Tak Oh, Su Yeol Lee
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Abstract
The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGal-xN layer, where 0<x<1, is interposed between the first and second n-type GaN layers, thereby forming a two-dimensional electron gas layer at interfaces of the first and second n-type GaN layers.
Claims14
A nitride semiconductor light emitting device comprising:
- a substrate;
- a first n-type GaN layer, an AlxGal-xN layer (where 0<x<1), a second n-type GaN layer, an active layer and a p-type semiconductor layer sequentially formed on the substrate;
- and
- an AIN layer disposed between the AlxGal-xN layer and the first or the second n-type GaN layer, wherein
- two-dimensional electron gas layers are formed at interfaces between the first n-type GaN layer and the AlxGal-xN layer and between the AlxGal-xN layer and the second n-type GaN layer.
Dependencies are inferred from the claim text.