US 7,479,658 B2 · Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers

Abstract

A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

Claims5

Dependent claims

An epitaxial wafer comprising:

a) a substrate;
b) at least two group III-nitride layers epitaxially formed on said substrate;
and
c) at least one group III-nitride interlayer epitaxially formed between said at least two group III-nitride layers and which substantially does not contain Al, said at least one group III-nitride interlayer comprising
c-1) at least one first interlayer formed at a first growth temperature, and
c-2) a plurality of second interlayers alternately stacked with said at least one first interlayer and formed at a second growth temperature that is lower than said first growth temperature and also lower than a growth temperature of each of said at least two group III-nitride layers.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/909,477Filed 2 Aug 2004

Priority

JP 2003-2057284 Aug 2003

Published

US 2005/0028888 A110 Feb 2005

Granted

20 Jan 2009

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

C30B 29/403
AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi: aIII-nitrides
C30B 25/20
Characterised by the substrate: the substrate being of the same materials as the epitaxial layer
H10P 14/24
Of semiconductor materials: using chemical vapour deposition [CVD]
H10P 14/2901
Characterised by the substrates: materials

Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers

Life of this patent

Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers

Life of this patent

Abstract

Claims5