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US 7,479,656 B2Granted
Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal
AssigneesSamsung Japan Corporation, National Institute of Advanced Industrial Science and Technology Laboratory for Advanced Optical Technology
InventorsJoo-Ho Kim, Junji Tominaga
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Abstract
A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.
Claims25
Compound semiconductor, manufactured by a method comprising the steps of:
- forming a layered structure of a plurality of dielectric layers and an inter layer formed between said dielectric layers, said dielectric layers including one of oxygen, sulfur, and both oxygen and sulfur, said inter layer including one of rare earth transition metal, rare earth metal, transition metal, and both rare earth metal and transition metal that are highly reactive to oxygen and sulfur, and
- heating at least a portion of said layered structure so as to induce chemical reaction and diffusion of elements in all of the layers such that the heated portion of the layered structure is converted into a compound being a semiconductor.
A photo cell, comprising a semiconductor layer manufactured by a method comprising the steps of:
- forming a layered structure of a plurality of dielectric layers and an inter layer formed between said dielectric layers, said dielectric layers including one of oxygen, sulfur, and both oxygen and sulfur, said inter layer including one of rare earth transition metal, rare earth metal, transition metal, and both rare earth metal and transition metal that are highly reactive to oxygen and sulfur, and
- heating at least a portion of said layered structure so as to induce chemical reaction and diffusion of elements in all the layers such that the heated portion of the layered structure is converted into a compound being a semiconductor.
A transistor, comprising:
- a source;
- a drain;
- a gate;
- and
- a channel;
- wherein said transistor is manufactured by a method comprising the steps of:
- forming a layered structure of a plurality of dielectric layers and an inter layer formed between said dielectric layers, said dielectric layers including one of oxygen, sulfur, and both oxygen and sulfur, said inter layer including one of rare earth transition metal, rare earth metal, transition metal, and both rare earth metal and transition metal that are highly reactive to oxygen and sulfur;
- heating portions of said layered structure corresponding to said source, said drain, and said gate to a temperature of less than 753° K so as to change said portions to conductive units, wherein the heating induces chemical reaction and diffusion of elements in the portions of said layered structure corresponding to said source, said drain, and said gate to convert the respective portions to compounds being conductors;
- and
- heating a portion of said layered structure corresponding to said channel to a temperature of 753° K or more and less than 783° K so as to change said portion to a semiconductor unit, wherein the heating induces chemical reaction and diffusion of elements in the portion of said layered structure corresponding to said channel to convert the portion to a compound being a semiconductor.
7 more elements
A memory, comprising:
- a source;
- a drain;
- a gate;
- a channel;
- and
- a capacitor;
- wherein said memory is manufactured by a method comprising the steps of:
- forming a layered structure of a plurality of dielectric layers and an inter layer formed between said dielectric layers, said dielectric layers including one of oxygen, sulfur, and both oxygen and sulfur, said inter layer including one of rare earth transition metal, rare earth metal, transition metal, and both rare earth metal and transition metal that are highly reactive to oxygen and sulfur;
- heating portions of said layered structure corresponding to said source, said drain, and said gate to a temperature of less than 753° K so as to change said portions to conductive units, wherein the heating induces chemical reaction and diffusion of elements in the portions of said layered structure corresponding to said source, said drain, and said gate to convert the respective portions to compounds being conductors;
- heating a portion of said layered structure corresponding to said channel to a temperature of 753° K or more and less than 783° K so as to change said portion to a semiconductor unit, wherein the heating induces chemical reaction and diffusion of elements in the portion of said layered structure corresponding to said channel to convert the portion to a compound being a semiconductor;
- and
- heating a portion of said layered structure between said source and said drain corresponding to said capacitor to a temperature of 783° K or more so as to change said portion to an insulating unit, wherein the heating induces chemical reaction and diffusion of elements in the portion of said layered structure corresponding to said capacitor to covert the portion to a compound being a insulator.
9 more elements
A flash memory, comprising:
- a source;
- a drain;
- a gate;
- a channel;
- and
- a floating gate;
- wherein said flash memory is manufactured by a method comprising the steps of:
- forming a layered structure of a plurality of dielectric layers and an inter layer formed between said dielectric layers, said dielectric layers including one of oxygen, sulfur, and both oxygen and sulfur, said inter layer including one of rare earth transition metal, rare earth metal, transition metal, and both rare earth metal and transition metal that are highly reactive to oxygen and sulfur;
- heating portions of said layered structure corresponding to said source, said drain, and said gate to a temperature of less than 753° K so as to change said portions to conductive units, wherein the heating induces chemical reaction and diffusion of elements in the portions of said layered structure corresponding to said source, said drain, and said gate to convert the respective portions to compounds being conductors;
- heating a portion of said layered structure corresponding to said channel to a temperature of 753° K or more and less than 783° K so as to change said portion to a semiconductor unit, wherein the heating induces chemical reaction and diffusion of elements in the portion of said layered structure corresponding to said channel to convert the portion to a compound being a semiconductor;
- and
- heating a portion of said layered structure corresponding to said floating gate between said source and said drain to a temperature of 753° K or more and less than 783° K so as to change said portion to a semiconductor unit, wherein the heating induces chemical reaction and diffusion of elements in the portion of said layered structure corresponding to said floating gate to convert the portion to a compound being a semiconductor.
9 more elements
Compound semiconductor, comprising:
- a layered structure comprising a plurality of dielectric layers and an inter layer formed between the dielectric layers, the dielectric layers including one of oxygen, sulfur, and both oxygen and sulfur, the inter layer including one of rare earth transition metal, rare earth metal, transition metal, and both rare earth metal and transition metal that are highly reactive to oxygen and sulfur;
- and
- a heated portion of the layered structure, wherein the heated portion is heated to induce chemical reaction and diffusion of elements in the layered structure, the heated portion of the layered structure comprising:
- a compound comprising elements from said inter layer and said dielectric layers, wherein one of sulfur, oxygen, and both oxygen and sulfur are diffused from the dielectric layer into the inter layer, and one of rare earth transition metal, rare earth metal, transition metal, and both rare earth metal and transition metal are diffused from the inter layer into the dielectric layer, wherein the diffusion and chemical reaction induced between layers is such that said heated portion is a semiconductor.
1 more element
A photo cell, comprising a semiconductor layer comprising:
- a layered structure comprising a plurality of dielectric layers and an inter layer formed between the dielectric layers, the dielectric layers including one of oxygen, sulfur, and both oxygen and sulfur, the inter layer including one of rare earth transition metal, rare earth metal, transition metal, and both rare earth metal and transition metal that are highly reactive to oxygen and sulfur;
- and
- a heated portion of the layered structure, wherein the heated portion is heated to induce chemical reaction and diffusion of elements, the heated portion of the layered structure comprising:
- a compound comprising elements from the inter layer and the dielectric layer, wherein one of sulfur, oxygen, and both oxygen and sulfur are diffused from the dielectric layer into the inter layer, and one of rare earth transition metal, rare earth metal, transition metal, and both rare earth metal and transition metal are diffused from the inter layer into the dielectric layer, wherein the diffusion and chemical reaction induced between layers is such that the heated portion is a semiconductor.
1 more element
A transistor, comprising:
- a layered structure of a plurality of dielectric layers and an inter layer formed between the dielectric layers, the dielectric layers including one of oxygen, sulfur, and both oxygen and sulfur, the inter layer including one of rare earth transition metal, transition metal, and both rare earth metal and transition metal that are highly reactive to oxygen and sulfur;
- a source farmed in a first portion of the layered structure, wherein the first portion is heated to induce chemical reaction and diffusion of elements in the layered structure, such that the first portion comprises a compound including elements from the inter layer and the dielectric layers, wherein the diffusion and chemical reaction is such that the first portion is conductive;
- a drain formed in a second portion of the layered structure, wherein the second portion is heated to induce chemical reaction and diffusion of elements in the layered structure, such that the second portion comprises a compound including elements from the inter layer and the dielectric layers, wherein the diffusion and chemical reaction is such that the second portion is conductive;
- a gate formed in a third portion of the layered structure, wherein the third portion is heated to induce chemical reaction and diffusion of elements in the layered structure, such that the third portion comprises a compound including elements from said inter layer and said dielectric layer, wherein the diffusion and chemical reaction is such that the third portion is conductive;
- and
- a channel formed in a fourth portion of the layered structure, wherein the fourth portion is heated to induce chemical reaction and diffusion of elements in the layered structure, such that the fourth portion comprises a compound including elements from said inter layer and said dielectric, and the diffusion and chemical reaction is such that the fourth portion is a semiconductor.
3 more elements
A memory, comprising:
- a layered structure of a plurality of dielectric layers and an inter layer formed between the dielectric layers, the dielectric layers including one of oxygen, sulfur, and both oxygen and sulfur, the inter layer including one of rare earth transition metal, transition metal, and both rare earth metal and transition metal that are highly reactive to oxygen and sulfur;
- a source, a gate, and a drain formed in a first portion, a second portion, and a third portion respectively of the layered structure, wherein each of the first, second, and third portions is heated to induce chemical reaction and diffusion of elements in the respective portions of the layered structure, such that each of the first, second, and third portions comprise a compound including elements from the inter layer and the dielectric layers, wherein the diffusion and chemical reaction in each of the first, second, and third portions is such that the first, second, and third portions are each conductive;
- a channel formed in a fourth portion of the layered structure, wherein the fourth portion is heated to induce chemical reaction and diffusion of elements in the layered structure, such that the fourth portion comprises a compound including elements from the inter layer and the dielectric layers, wherein the diffusion and chemical reaction is such that the fourth portion is a semiconductor;
- and
- a capacitor formed in a fifth portion of the layered structure between the source and the drain, wherein the fifth portion is heated to induce chemical reaction and diffusion of elements in the layered structure, such that the fifth portion comprises a compound including elements from the inter layer and the dielectric layers, wherein the diffusion end chemical reaction is such that the fifth portion is an insulator.
2 more elements
A flash memory, comprising:
- a source, a gate, and a drain formed in a first portion, a second portion, and a third portion respectively of the layered structure, wherein each of the first, second and third portions is heated to induce chemical reaction and diffusion of elements in respective portions of the layered structure, such that each of the first, second, and third portions comprises a compound including elements from the inter layer and the dielectric layers, wherein the diffusion and chemical reaction in each of the first, second, and third portions is such that the first, second, and third portions are each conductive;
- a channel formed in a fourth portion of the layered structure, wherein the fourth portion is heated to induce chemical reaction and diffusion of elements in the layered structure, such that the fourth portion comprises a compound including elements from the inter layer and the dielectric layers, wherein the diffusion and chemical reaction is such that the fourth portion is a semiconductor;
- and
- a floating gate formed in a fifth portion of the layered structure between the source and the drain, wherein the fifth portion is heated to induce chemical reaction and diffusion of elements in the layered structure, such that the fifth portion comprises a compound including elements from the inter layer and the dielectric layers, wherein the diffusion and chemical reaction is such that the fifth portion is a semiconductor.
1 more element
Dependencies are inferred from the claim text.