Semiconductor device
AssigneePanasonic Corporation
InventorsTomohiro Murata, Yutaka Hirose, Tsuyoshi Tanaka
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises an active layer formed on a substrate, a superlattice layer formed on the active layer, and an ohmic electrode formed on the superlattice layer. In the superlattice layer, a first thin film and a second thin film are alternately laminated. The second thin film is made of a semiconductor which has polarization characteristics different from those of the first thin film and a band gap larger than that of the first thin film. An interface region between an upper surface of the first thin film and a lower surface of the second thin film or an interface region between a lower surface of the first thin film and an upper surface of the second thin film, is doped with an impurity.
Claims19
A semiconductor device comprising:
- a first nitride semiconductor layer;
- a superlattice layer formed on the first nitride semiconductor layer, and comprising first thin films and second thin films alternately laminated, the first thin film and the second thin film having different polarization characteristics, and a band gap of the second thin film being larger than a band gap of the first thin film;
- and
- an ohmic electrode formed on the superlattice layer,
- wherein a region doped with an impurity is formed in a first interface region between a lower surface of the first thin film and an upper surface of the second thin film, and
- an impurity concentration in the first interface region is higher than that in a second interface region between an upper surface of the first thin film and a lower surface of the second thin film.
Dependencies are inferred from the claim text.