Resolution-variable X-ray imaging device and X-ray CT apparatus
AssigneeFUJIFILM Corporation
InventorTakeshi Misawa
Life of this patent
Estimating the term…
Abstract
A resolution-variable X-ray imaging device is provided and includes: a scintillator that receives an X-ray through a subject to emit fluorescence; and an imaging device comprising a plurality of pixels aligned at pixel intervals on a light receiving surface of the imaging device, each of the pixels receiving the fluorescence and converting the fluorescence into an electric signal. The imaging device has at least two areas of: a higher-resolution imaging area in which the pixels are aligned at a pixel interval; and a lower-resolution imaging area in which the pixels are aligned at a pixel interval longer than the pixel interval of the higher-resolution imaging area.
Claims14
A resolution-variable X-ray imaging device comprising:
- a scintillator that receives an X-ray through a subject to emit fluorescence;
- and
- an imaging portion comprising:
- a plurality of pixels aligned at pixel intervals on a light receiving surface of the imaging portion, each of the pixels receiving the fluorescence and converting the fluorescence into an electric signal;
- a higher-resolution imaging area in which the pixels are aligned at a pixel interval;
- a lower-resolution imaging area in which the pixels are aligned at a pixel interval longer than the pixel interval of the higher-resolution imaging area;
- a p-type semiconductor layer formed on a surface of a flexible substrate comprising one of glass and a polymer;
- a charge storage diode formed on a surface portion of the p-type semiconductor layer;
- an n+-region constituting a part of a transistor of a signal reading circuit formed on the surface portion of the p-type semiconductor layer;
- and
- an insulating layer formed on the surface portion of the p-type semiconductor layer,
- wherein the areas of the imaging portion are selectable according to a desired image resolution.
An X-ray CT apparatus comprising:
- an X-ray irradiator that irradiates a subject with an X-ray;
- a resolution-variable X-ray imaging device, the X-ray imaging device being a positioned opposite to the X-ray irradiator through the subject, the X-ray imaging device comprising an imaging portion comprising:
- a higher-resolution imaging area in which the pixels are aligned at a pixel interval;
- a lower-resolution imaging area in which the pixels are aligned at a pixel interval longer than the pixel interval of the higher-resolution imaging area;
- a p-type semiconductor layer formed on a surface of a flexible substrate comprising one of glass and a polymer;
- a charge storage diode formed on a surface portion of the p-type semiconductor layer;
- an n+-region constituting a part of a transistor of a signal reading circuit formed on the surface portion of the p-type semiconductor layer;
- and
- an insulating layer formed on the surface portion of the p-type semiconductor layer;
- and
- a driving unit that turns integrally the X-ray irradiator and the resolution-variable X-ray imaging device round the subject in such a state that the resolution-variable X-ray irradiator and the X-ray imaging device are opposed to each other,
- wherein the areas of the imaging portion are selectable according to a desired image resolution.
A method of manufacturing a resolution-variable X-ray imaging device, comprising:
- forming and aligning a plurality of pixels at a narrow pitch in a higher-resolution imaging area;
- forming and aligning a plurality of pixels at a wide pitch in a lower-resolution imaging area, the lower-resolution imaging area pixels comprising a light receiving area wider than a light receiving area of the higher-resolution imaging area pixels;
- forming a p-type semiconductor layer on a surface of a flexible substrate comprising one of glass and a polymer;
- forming a charge storage diode and a signal reading circuit on a bottom portion of the pixels and a surface portion of the p-type semiconductor layer, the signal reading circuit comprising at least three transistors used in a complementary metal-oxide-semiconductor image sensor;
- forming an n+-region constituting a part of one of said at least three transistors of the signal reading circuit on the surface portion of the p-type semiconductor layer;
- forming an insulating layer formed on the surface portion of the p-type semiconductor layer;
- and
- forming a scintillator over the imaging portion, the scintillator including a separator between the pixels,
- wherein the signal reading circuit is connected to a vertical shift register and a horizontal shift register.
Dependencies are inferred from the claim text.