Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
AssigneeEKC Technology, Inc.
InventorsMihaela Cernat, Shihying Lee
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Abstract
A novel cleaning composition used for post-etch resist residue removal is disclosed. In contrast to the conventional cleaning solutions based on fluoride chemistries, the present invention can significantly reduce the oxide loss resulting from the exfoliation, while still providing an excellent cleaning efficiency.
Claims27
A method of cleaning etching residue from a substrate comprising a low k dielectric material comprising the steps of:
- contacting the substrate comprising a low k dielectric material with a composition comprising:
- (a) H2SiF6;
- (b) an organic solvent;
- (c) an amine;
- (d) a corrosion inhibitor;
- and (e) water, wherein said composition is capable of exfoliating post-etch residues and of minimizing oxide loss, and wherein the composition has a pH lower than 7, for a time and at a temperature sufficient to cause the composition to substantially remove the residues.
A method of cleaning etching residue from a substrate comprising a low k dielectric material comprising the steps of:
- contacting the substrate comprising a low k dielectric material with a composition comprising:
- (a)4 H2 SiF6;
- and (b) greater than 90% water wherein said composition is capable of exfoliating post-etch residues and of minimizing oxide loss, and wherein the composition has a pH lower than 7, for a time and at a temperature sufficient to cause the composition to substantially remove the residues.
A method of cleaning etching residue from a substrate comprising a low k dielectric material comprising the steps of:
- contacting the substrate comprising a low k dielectric material with a composition comprising:
- (a) H2SiF6;
- (b) water;
- and (c) a corrosion inhibitor, wherein said composition is capable of exfoliating post-etch residues and of minimizing oxide loss, and wherein the composition has a pH of 5 or greater but lower than 7, for a time and at a temperature sufficient to cause the composition to substantially remove the residues.
A method of cleaning etching residue from a substrate comprising a low k dielectric material comprising the steps of:
- contacting the substrate with a composition comprising:
- (a) HBF4 or H2SiF6;
- (b) greater than 90% water, wherein said composition is capable of exfoliating post-etch residues and of minimizing oxide loss, and wherein the composition has a pH lower than 7, for a time and at a temperature sufficient to cause the composition to substantially remove the residues.
Dependencies are inferred from the claim text.