High thermally conductive aluminum nitride sintered product
AssigneesKabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
InventorsMichiyasu Komatsu, Kimiya Miyashita
Life of this patent
Estimating the term…
Abstract
The high thermal conductive aluminum nitride sintered body according to the present invention has: a thermal conductivity of 220 W/m·K or more; and a three point bending strength of 250 MPa or more; wherein a ratio (IAl2Y4O9/IAlN) of X-ray diffraction intensity (IAl2Y4O9) of Al2Y4O9 (201 plane) with respect to X-ray diffraction intensity (IAlN) of aluminum nitride (101 plane) is 0.002 to 0.03. According to the foregoing structure, there can be provided an aluminum nitride sintered body having a high thermal conductivity and excellent heat radiating property.
Claims12
A high thermal conductive aluminum nitride sintered body having:
- a thermal conductivity of 220 W/m·K or more;
- and
- a three point bending strength of 250 MPa or more;
- wherein
- a ratio (IAl2Y4O9/IAlN) of X-ray diffraction intensity (IAl2Y4O9) of Al2Y4O9 (201 plane) with respect to X-ray diffraction intensity (IAlN) of aluminum nitride (101 plane) that is 0.002 to 0.03, and wherein said aluminum nitride sintered body comprises
- 0.14-1.5 mass % of Y element and 0.05-0.5 mass % of oxygen,
- a mass ratio (O/Y) of oxygen (O) with respect to Y element that is 0.5 or less,
- an average diameter of aluminum nitride crystal grains that is 4 μm or more,
- a number of crystal grains existing in an arbitrary crystal structure area of 100 μm×100 μm that is 200 or less, and
- a maximum diameter of grain boundary phase that is 0.5 μm or less.
A high thermal conductive aluminum nitride sintered body having:
- a thermal conductivity of 200 W/m·K or more;
- and
- a three point bending strength of 250 MPa or more;
- wherein
- a ratio (IAl2Y4O9/IAlN) of X-ray diffraction intensity (IAl2Y4O9) of Al2Y4O9 (201 plane) with respect to X-ray diffraction intensity (IAlN) of AlN (101 plane) is 0.002 to 0.06, and a ratio (Iy2O3/IAlN) of X-ray diffraction intensity (Iy2O3) of Y2O3 (222 plane) with respect to X-ray diffraction intensity (IAlN) of AlN (101 plane) that is 0.008 to 0.06, and wherein said aluminum nitride sintered body comprises
- 0.14-1.5 mass % of Y element and 0.05-0.5 mass % of oxygen,
- a mass ratio (O/Y) of oxygen (O) with respect to Y element that is 0.6 or less,
- an average diameter of aluminum nitride crystal grains that is 6 μm or more,
- a number of crystal grains existing in an arbitrary crystal structure area of 100 μm×100 μm that is 150 or less, and
- a maximum diameter of grain boundary phase that is 0.5 μm or less.
Dependencies are inferred from the claim text.