Method of heating semiconductor wafer to improve wafer flatness
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiao-Tzu Lu, Burn-Jeng Lin, Chin-Hsiang Lin, Kuei-Shun Chen, Tsai-Sheng Gau
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Abstract
A method of heating-treating a semiconductor wafer is provided. In one embodiment, a first layer is formed over a first side of a substrate. A second layer is formed over the first layer and over a second side of the substrate and the wafer is then flash annealed. In another embodiment, a first layer is formed over a first side of a substrate and over a second side of the substrate. A second layer is formed over the first layers and the wafer is then flash annealed.
Claims30
A method for treating a semiconductor wafer comprising:
- forming a first layer over a first side of a substrate;
- forming a second layer over the first layer and over a second side of the substrate;
- annealing the first layer;
- and
- flash annealing the wafer after annealing the first layer.
A method of treating a semiconductor wafer comprising:
- forming a first layer over a first side of a substrate and over a second side of the substrate;
- forming a second layer over the first layer;
- annealing the first layer;
- and
- flash annealing the wafer after annealing the first layer.
Dependencies are inferred from the claim text.