Transfer of stress to a layer

A method, comprising:

• providing a substrate having a semiconductor layer;
• forming a first dielectric layer having a first stress over the semiconductor layer;
• applying a first radiation anneal over the first dielectric layer of a duration not exceeding 10 milliseconds to create a semiconductor layer having a second stress;
• removing the first dielectric layer, wherein at least a portion of the second stress remains in the stressed semiconductor layer after the first dielectric layer is removed;
• forming a gate electrode over the semiconductor layer;
• forming first and second source/drain regions in the semiconductor layer;
• forming a second dielectric layer having a third stress over the semiconductor layer;
• and
• applying a second radiation anneal over the second dielectric layer of a duration not exceeding 10 milliseconds to create a semiconductor layer having a fourth stress, wherein at least a portion of the fourth stress would remain in the semiconductor layer if the second dielectric layer were removed.