Method for manufacturing semiconductor wafer
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Kwon Jeong, Hyeon Hwang
Life of this patent
Estimating the term…
Abstract
A method may involve mounting a first supporting plate on an active surface of a wafer using an adhesive. A portion of the back surface of the wafer may be backlapped. A second supporting plate may be mounted on the back surface of the wafer using an adhesive. The first supporting plate may be removed from the active surface of the wafer. Conductive bumps may be provided on the active surface. A backlapping process may include a first grinding process, a second grinding process, and a polishing process. The first and the second supporting plates may be fabricated from a solid material. The adhesive may be an ultraviolet cure adhesive or a thermal cure adhesive.
Claims22
A method comprising:
- mounting a first supporting plate on an active surface of a wafer;
- backlapping a portion of a back surface of the wafer, the backlapping including:
- a first grinding process for grinding the back surface using a first grinding wheel,
- a second grinding process for grinding the back surface using a second grinding
- wheel having a grinding surface that is less rough than a grinding surface of the first grinding wheel, and
- a polishing process for polishing the back surface using a slurry;
- mounting a second supporting plate on the back surface of the wafer;
- and
- forming conductive bumps on the active surface after the first supporting plate is removed from the active surface.
A method comprising:
- mounting a first supporting plate of a solid material on an active surface of a wafer;
- backlapping a portion of a back surface of the wafer, the backlapping including:
- a first grinding process for grinding the back surface using a first grinding wheel having a grain size between 300 mesh and 350 mesh,
- a second grinding process for grinding the back surface using a second grinding wheel having a grain size between 1,500 mesh and 2,500 mesh, and
- a polishing process for polishing the back surface using a slurry;
- mounting a second supporting plate of a solid material on the back surface of the wafer;
- removing the first supporting plate from the active surface of the wafer;
- and
- forming conductive bumps on the active surface after the first supporting plate is removed from the active surface.
Dependencies are inferred from the claim text.