Method of manufacturing semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsJung Geun Kim, Ki Hong Yang
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Abstract
A method of manufacturing a semiconductor device in a MLM process to reduce compression stress of a metal line or a HDP oxide film, and to reduce compression stress in a subsequent metal line thermal treatment process. It is thus possible to reduce generation of a crack caused by compression stress. Further, by obviating a heterogeneous interface becoming a cause of a crack and stabilizing the interface of an unstable TEOS oxide film, generation of a crack in a semiconductor device can be reduced.
Claims8
A method of manufacturing a semiconductor device, comprising:
- (a) forming a metal line on a first insulating film formed over a semiconductor substrate;
- (b) patterning the metal line and partially removing the first insulating film by an over-etch process;
- (c) reducing a compression stress of the metal line patterned by the over-etch process;
- (d) forming a second insulating film on the compression stress reduced metal line;
- and
- (e) performing a first thermal treatment process,
- wherein the step (c) is performed after the step (b) is completed and before the step (d) is performed.
A method of manufacturing a semiconductor device, comprising:
- (a) forming a metal line on a first insulating film formed over a semiconductor substrate,
- (b) patterning the metal line and partially removing the first insulating film by an over-etch process;
- (c) forming a second insulating film on the metal line;
- and
- (d) performing a thermal treatment process,
- wherein Al2O3 and W are included within the metal line in order to increase a melting point of the metal line.
A method of manufacturing a semiconductor device, comprising:
- forming a first HDP oxide film over a semiconductor substrate;
- forming a metal line on the first HDP oxide film;
- patterning the metal line and partially removing the HDP oxide film by an over-etch process;
- forming a second HDP oxide film on the first HDP oxide film and the metal line patterned by the over-etch process;
- and
- performing a thermal treatment process.
A method of manufacturing a semiconductor device, comprising:
- forming a first TEOS oxide film over a semiconductor substrate;
- forming a metal line on the first TEOS oxide film;
- patterning the metal line and partially removing the TEOS oxide film by an over-etch process;
- forming a second TEOS oxide film on the first TEOS oxide film and the metal line patterned by the over-etch process;
- and
- performing a thermal treatment process.
Dependencies are inferred from the claim text.