Method for forming Schottky diodes and ohmic contacts in the same integrated circuit

Abstract

A method for forming an ohmic contact and a Schottky diode in an integrated circuit includes providing a semiconductor substrate; forming first and second diffusion regions in the semiconductor substrate; forming an insulating layer on the semiconductor substrate; forming a first contact opening in the insulating layer and over the first diffusion region to expose the semiconductor substrate; forming a barrier metal layer on the insulating layer and in the first contact opening; forming a second contact opening in the barrier metal layer and the insulating layer to expose the semiconductor substrate where the second contact opening is formed over the second diffusion region; forming a metal layer on the barrier metal layer and the insulating layer and in the first and second contact openings where the metal layer includes a metal that forms a Schottky barrier junction with the semiconductor substrate; and patterning the metal layer to form the ohmic contact over the first diffusion region and the Schottky diode over the second diffusion region.

Dependencies are inferred from the claim text.