Germanium deposition
AssigneeASM America, Inc.
InventorsMatthias Bauer, Paul Brabant, Trevan Landin
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Abstract
A method comprises, in a reaction chamber, depositing a seed layer of germanium over a silicon-containing surface at a first temperature. The seed layer has a thickness between about one monolayer and about 1000 Å. The method further comprises, after depositing the seed layer, increasing the temperature of the reaction chamber while continuing to deposit germanium. The method further comprises holding the reaction chamber in a second temperature range while continuing to deposit germanium. The second temperature range is greater than the first temperature.
Claims15
A method comprising:
- in a reaction chamber being held at a first pressure, depositing a seed layer of germanium over a silicon-containing surface at a first temperature;
- after depositing the seed layer, increasing the temperature of the seed layer while continuing to deposit germanium;
- and
- holding the seed layer in a second temperature range and at a second pressure while continuing to deposit germanium, wherein the second temperature range is greater than the first temperature, and wherein the second pressure is lower than the first pressure.
A method comprising:
- providing a purge gas flow through a reaction chamber, wherein the purge gas comprises H2;
- depositing a seed layer of germanium over a silicon-containing substrate at a first temperature while the purge gas is flowing through the reaction chamber at a first flow rate;
- after depositing the seed layer, increasing the temperature of the substrate while continuing to deposit germanium;
- and
- holding the substrate in a second temperature range while continuing to deposit germanium, and while flowing the purge gas through the reaction chamber at a second flow rate, wherein the second temperature range is greater than the first temperature, and wherein the second flow rate is greater than the first flow rate.
A method comprising:
- in a reaction chamber, depositing a seed layer of germanium over a silicon-containing substrate at a first temperature;
- after depositing the seed layer, increasing the temperature of the substrate while continuing to deposit germanium thereon;
- holding the substrate in a second temperature range while continuing to deposit germanium thereon, wherein the second temperature range is greater than the first temperature;
- and
- supplying a chlorine source to the reaction chamber while the substrate is being held in the second temperature range, wherein the chlorine source is a chlorogermane.
Dependencies are inferred from the claim text.