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US 7,479,438 B2Granted
Method to improve performance of a bipolar device using an amorphizing implant
AssigneeAgere Systems Inc.
InventorsAlan S. Chen, Mark Dyson, Daniel C. Kerr, Nace M. Rossi
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Abstract
The invention, in one aspect, provides a semiconductor device that comprises a bipolar transistor located over and within a semiconductor substrate, a collector located within a tub of the bipolar transistor and having an amorphous region formed at least partially therein, a base located over the collector, and an emitter located over the base. There is also provided a method of fabricating the semiconductor device.
Claims23
A method of manufacturing a semiconductor device, comprising:
- forming an amorphous region at least partially in a collector region for a bipolar transistor;
- forming a collector in the collector region;
- forming a base over the collector region;
- and
- forming an emitter over the base.
2 more elements
A method of manufacturing an integrated circuit, comprising:
- forming non-bipolar transistors over a semiconductor substrate;
- forming bipolar transistors over the semiconductor substrate, including forming an amorphous region at least partially in a collector region of at least one bipolar transistor;
- forming a collector in the collector region;
- forming a base over the collector region;
- and forming an emitter over the base;
- forming dielectric layers over the non-bipolar transistors and bipolar transistors;
- and
- forming interconnects in the dielectric layers that electrically connect the non-bipolar and bipolar transistors.
5 more elements
A semiconductor device, comprising:
- a bipolar transistor located over a semiconductor substrate;
- a collector located within the semiconductor substrate and having an amorphous region formed at least partially therein;
- a base located over the collector;
- and
- an emitter located over the base.
2 more elements
Dependencies are inferred from the claim text.