Method of forming a circuit having subsurface conductors
AssigneeNational Semiconductor Corporation
InventorsPeter J. Hopper, Vladislav Vashchenko, Philipp Lindorfer, Andy Strachan
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Abstract
A MOS transistor and subsurface collectors can be formed by using a hard mask and precisely varying the implant angle, rotation, dose, and energy. In this case, a particular atomic species can be placed volumetrically in a required location under the hard mask. The dopant can be implanted to form sub-silicon volumes of arbitrary shapes, such as pipes, volumes, hemispheres, and interconnects.
Claims10
A method of forming a semiconductor circuit in a semiconductor material of a first conductivity type, the semiconductor material having a surface, the method comprising:
- forming a mask on the surface of the semiconductor material, the mask having a pattern with a number of openings;
- and
- implanting the surface of the semiconductor material through the number of openings in the mask with a dopant of a second conductivity type to form spaced-apart first and second implanted regions in the semiconductor material, the first and second implanted regions contacting the surface of the semiconductor material, a portion of the second implanted region lying directly under the first implanted region, the second implanted region contacting the surface of the semiconductor material on opposite sides of the first implanted region.
A method of forming a semiconductor circuit in a semiconductor material of a first conductivity type, the semiconductor material having a surface, the method comprising:
- forming a mask on the surface of the semiconductor material, the mask having a pattern with a number of openings;
- and
- implanting the surface of the semiconductor material through the number of openings in the mask with a dopant of a second conductivity type to form spaced-apart first and second implanted regions in the semiconductor material, the first and second implanted regions contacting the surface of the semiconductor material, a portion of the second implanted region lying directly under the first implanted region, the second implanted region contacting the surface of the semiconductor material on opposite sides of the first implanted region, a third implanted region being formed when the first and second implanted regions are formed, the third implanted region being spaced apart from the first and second implanted regions, a channel region of the semiconductor material lying between and contacting the first implanted region and the third implanted region.
Dependencies are inferred from the claim text.