Back to results
US 7,479,431 B2Granted
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
AssigneeIntel Corporation
InventorsMichael L. Hattendorf, Jack Hwang, Anand Murthy, Andrew N. Westmeyer
Life of this patent
Estimating the term…
Abstract
Some embodiments of the present invention include providing carbon doped regions and raised source/drain regions to provide tensile stress in NMOS transistor channels.
Claims18
A method comprising:
- forming a gate structure on a substrate;
- performing an amorphization implant on the substrate;
- implanting carbon into the substrate;
- annealing the substrate to form a substitutional carbon region;
- forming a raised source structure and a raised drain structure on the substrate;
- and
- implanting a dopant to form a tip implant region, wherein the bottom of the substitutional carbon region is below the bottom of the tip implant region.
4 more elements
A method comprising:
- forming a gate structure on a substrate;
- performing an amorphization implant on the substrate;
- implanting carbon into the substrate;
- annealing the substrate to form a substitutional carbon region;
- and
- forming a raised source structure and a raised drain structure on the substrate, wherein implanting carbon includes multiple carbon implants of varying energies.
3 more elements
A method comprising:
- forming a gate structure on a substrate;
- performing an amorphization implant on the substrate;
- implanting carbon into the substrate;
- annealing the substrate to form a substitutional carbon region;
- and
- forming a raised source structure and a raised drain structure on the substrate, wherein annealing the substrate includes a sub-melt laser anneal.
3 more elements
A method comprising:
- forming a gate structure on a substrate;
- performing an amorphization implant on the substrate;
- implanting carbon into the substrate;
- annealing the substrate to form a substitutional carbon region;
- forming a raised source structure and a raised drain structure on the substrate;
- forming a spacer adjacent to the gate structure;
- and
- removing the spacer.
5 more elements
Dependencies are inferred from the claim text.