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US 7,479,427 B2Granted
Semiconductor device and method of fabrication
AssigneeSpansion LLC
InventorsMasahiko Higashi, Hiroyuki Nansei
Life of this patent
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Abstract
A semiconductor memory device employs a SONOS type memory architecture and includes a bit line diffusion layer in a shallow trench groove in which a conductive film is buried. This makes it possible to decrease the resistivity of the bit line diffusion layer without enlarging the area on the main surface of the semiconductor substrate, and to fabricate the semiconductor memory device having stable electric characteristics without enlarging the cell area. The bit line is formed by implanting ions into the sidewall of Si3N4.
Claims5
A method of fabricating a semiconductor process comprising the steps of:
- forming electrodes extending in a column direction on a semiconductor substrate;
- forming sidewalls of silicon nitride on side walls of the electrodes;
- implanting ions into the semiconductor substrate with a mask provided by the sidewalls of silicon nitride so that bit lines are self-aligned;
- forming word lines extending in a row direction on the semiconductor substrate;
- and
- removing portions of the electrodes extending in the column direction, which portions are located in a region in which the word lines are not provided, so that the electrodes are divided into parts.
3 more elements
Dependencies are inferred from the claim text.