US 7,479,422 B2Granted

Semiconductor device with stressors and method therefor

AssigneeFreescale Semiconductor, Inc.

InventorsBrian A. Winstead, Ted R. White, Da Zhang

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Abstract

A method for forming a semiconductor device includes providing a substrate region having a first material and a second material overlying the first material, wherein the first material has a different lattice constant from a lattice constant of the second material. The method further includes etching a first opening on a first side of a gate and etching a second opening on a second side of the gate. The method further includes creating a first in-situ p-type doped epitaxial region in the first opening and the second opening, wherein the first in-situ doped epitaxial region is created using the second material. The method further includes creating a second in-situ n-type doped expitaxial region overlying the first in-situ p-type doped epitaxial region in the first opening and the second opening, wherein the second in-situ n-type doped epitaxial region is created using the second material.

Claims7

Dependent claims

A method for forming a semiconductor device, comprising:

providing a substrate region having a first material and a second material overlying the first material, wherein the first material has a different lattice constant from a lattice constant of the second material;
forming a gate in the substrate region having the second material;
etching a first opening on a first side of the gate and etching a second opening on a second side of the gate, wherein each of the first opening and the second opening extends into the substrate region having the first material;
creating a first in-situ doped epitaxial region in the first opening and the second opening, wherein the first in-situ doped epitaxial region is created using silicon and has a first doping type;
and
creating a second in-situ doped expitaxial region overlying the first in-situ doped epitaxial region in the first opening and the second opening, wherein the second in-situ doped epitaxial region is created using silicon and has a second doping type different from the first doping type;
wherein the first material is relaxed silicon germanium and the second material is relaxed silicon.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/373,536Filed 10 Mar 2006
Published: US 2007/0210314 A113 Sep 2007
Granted: 20 Jan 2009
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 30/0275
Of lateral single-gate IGFETs: forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised…
H10D 30/797
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: being in source or drain regions, e.g. SiGe source or drain
H10D 62/021
Manufacture or treatment: forming source or drain recesses by etching e.g. recessing by etching and then refilling