Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method of producing semiconductor device
AssigneeHitachi Chemical Company, Ltd.
InventorsToshiyasu Kawai, Hidekazu Matsuura
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Abstract
An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.
Claims13
A method of producing a semiconductor device, comprising a step of bonding an adhesive film for a semiconductor to a side of a lead frame having inner leads, a step of bonding a semiconductor element to an exposed side of the lead frame, a step of connecting the semiconductor element to the inner leads, a step of sealing the exposed side of the lead frame and the semiconductor element with a sealing material, and a step of peeling off the adhesive film for a semiconductor from the lead frame and the sealing material, wherein the adhesive film comprises a support film having a thickness (B) and a resin layer having a thickness (A) and coating one or each side of the support film, and wherein the thickness (A) of the resin layer is less than 15 μm and is related to the thickness (B) of the support film by a ratio (A)/(B) of at most 0.5.
Dependencies are inferred from the claim text.